آی جی بی تی درایور EXB840-50

آی جی بی تی درایور EXB840-50

آی جی بی تی درایور EXB840-50

ديتاشيت

EXB840 Application Circuits

• EXB840 is a hybrid IC capable of driving up to 150A for 600 V IGBT and up to 75A for a 1200 V IGBT. Since the signal delay in the drive circuit is 1µs or less, the hybrid IC is suitable for switching at up to about 40 kHz.
• Note the following when using the hybrid IC:
• The IGBT’s gate-emitter drive loop wiring must be shorter than one meter.
• The IGBT’s gate-emitter drive wiring should be twisted.
• If a large voltage spike is generated at the collec- tor of the IGBT, increase the IGBT’s gate series resistor(RG).
• The 33 µF (#) capacitor absorbs changes in the supply voltage caused by the power supply wiring impedance. It is not a power supply filter capacitor.